| IC number: | 6540 |
| IC function: | 16 kbit (2k×8) ROM with five chip selects |
| Related components: | 16 kbit (2k×8) ROM with two chip selects |
| IC number | Manufacturer | Documentation |
|---|---|---|
| 6540 | MOS Technology | Preliminary Datasheet July 1977 |
| IC number | Package | Access time |
|---|---|---|
| 6540 | 28-pin DIP | 300 ns |
| IC number | CBM part number | CBM part description | Chip description |
|---|
| Device | Position |
|---|
| Pin | Type | Name |
|---|---|---|
| 1 | Power | VSS |
| 2..4 | Input | CS5..CS3 |
| 5..10 | Input | A0..A5 |
| 11 | Input | A9 |
| 12 | Power | VCC |
| 13..15 | Input | A8..A6 |
| 16 | Input | Ø2 |
| 17 | Input | CS1 |
| 18 | Input | A10 |
| 19..26 | I/O | DB7..DB0 |
| 27 | Input | CS2 |
| 28 | N/C | NC |
Three-state outputs provide bus-compatibility with microprocessor-based memory systems. The ROM's are organized as 2048 words of 8 bits each.
Mask options provide user specification of chip select equations, allowing addressing anywhere within a 65K memory space without external decode circuitry.
| Rating | Symbol | Voltage | Unit |
|---|---|---|---|
| Supply Voltage | VCC | -0.3 to +7.0 | V |
| Input/Output Voltage | VIN | -0.3 to +7.0 | V |
| Operating Temperature | TOP | 0 to 70 | °C |
| Storage Temperature | TSTG | -55 to +150 | °C |
| Characteristic | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Input High Voltage | VIH | VSS+2.0 | - | VCC | V |
| Input Low Voltage | VIH | VSS-.3 | - | VSS+.8 | V |
| Input Leakage Current (A0-A10, CS1, CS2, Ø2) | IIN | 1.0 | 2.5 | µA | |
| Input Current for High Impedance (Three State) Outputs: VIN = 0.4V to 2.4V | ITSI | 1.0 | 10 | µA | |
| Output High Voltage: VCC = Min ILOAD <= -100µA | VOH | VSS+2.4 | V | ||
| Output Low Voltage: VCC = Min ILOAD <= 1.6mA | VOL | VSS+.4 | V | ||
| Output Low Current (sinking) VOL <= .4V | IOL | 1.6 | mA | ||
| Supply Current | ICC | 110 | 150 | mA |
